Polarization control of ScAlN, ZnO and PbTiO<sub>3</sub> piezoelectric films: application to polarization-inverted multilayer bulk acoustic wave and surface acoustic wave devices

نویسندگان

چکیده

Abstract Polarization-inverted multilayers are promising for application in bulk acoustic wave (BAW) resonators, BAW transformers, surface (SAW) devices and nonlinear optics crystals (NLOs). However, is difficult to obtain a polarization-inverted multilayer by conventional polarization control technique using buffer layer. Recently developed ion beam-induced inversion film growth attractive fabrication. Low-energy beam irradiation (several hundred electron volts) during enables the of (0001)/(000 1 ¯ ) c -axis normal ZnO, AlN ScAlN piezoelectric films. These structures excite thickness extensional mode (longitudinal wave). In contrast, high-energy (300–3000 eV) induces parallel which allows fabrication horizontal ZnO multilayers. suitable shear (TSM) resonators (FBARs), TSM liquid sensors out-of-plane NLOs. This review introduces unusual induced beams its applications. On other hand, (001)/(00 layer can be obtained ferroelectric paper also provides result external electric field-induced PbTiO 3 epitaxial

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Applications of Surface Acoustic and Shallow Bulk Acoustic Wave Devices

Applications of surface acoustic wave (SA W) and shallow bulk acoustic wave (SBA W) devices are reviewed. SA W-device coverage includes delay lines and filters operating at selected frequencies in the range from about 10 MHz to 11 GHz, modeling with singlecrystal piezoelectrics and layered structures, resonators and lowloss filters, comb filters and multiplexers, antenna duplexers, harmonic dev...

متن کامل

Zinc Oxide Piezoelectric Thin Films for Bulk Acoustic Wave Resonators

・ Abstract – Characteristics of Zinc oxide (ZnO) piezoelectric thin films have been investigated for thin film bulk acoustic wave (BAW) resonators with relationship to bottom electrodes. A Metal/ZnO/Metal/SiO2 membrane structure, which has secondary harmonics, was adopted for the BAW resonators. The ZnO thin films, showed clear c-axis orientation, were made by rf sputtering on bottom electrodes...

متن کامل

Observation of Charge Compensated Polarization Zones in Polyvinylindenfluoride ( Pvdf ) Films by Piezoelectric Acoustic Step - Wave Response

A tugh resolution (2/am) acousUc step-wave probing techmques has been developed to investigate the lnhomogeneous dtstnbutlon of the piezoelectric response of incompletely corona poled 85/am ttuck PVDF films We observe persistent polanzaUon zones or layers of 20-40/am width within the films wtuch are electrostatlcally compensated by charge accumulaUon at the polanzaUon zone boundaries The zone d...

متن کامل

Phonon-Electron Interactions in Piezoelectric Semiconductor Bulk Acoustic Wave Resonators

This work presents the first comprehensive investigation of phonon-electron interactions in bulk acoustic standing wave (BAW) resonators made from piezoelectric semiconductor (PS) materials. We show that these interactions constitute a significant energy loss mechanism and can set practical loss limits lower than anharmonic phonon scattering limits or thermoelastic damping limits. Secondly, we ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Japanese Journal of Applied Physics

سال: 2021

ISSN: ['0021-4922', '1347-4065']

DOI: https://doi.org/10.35848/1347-4065/abfd95